GS61008P
$4.50
Bulk pricing available for quantities of 100 units or more
Estimated delivery time
Shipping: 6–10 days
In stock
50
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| Quantity | Price per item | Discount |
| 100 items | $4.20 | 7% off |
| 3000 items | $3.90 | 13% off |
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GS61008P
Product Details
Brand: GaN Systems
GS61008P in stock. GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled.
Features
• 100 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 7 mΩ
• IDS(max) = 90 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 7.6 x 4.6 mm2 PCB footprint
• Source Sense (SS) pin for optimized gate drive
• RoHS 3 (6 + 4) compliant
Applications
• Energy Storage Systems
• AC-DC Converters (secondary side)
• Uninterruptable Power Supplies
• Industrial Motor Drives
• Fast Battery Charging
• Class D Audio amplifiers
• Traction Drive
• Robotics
• Wireless Power Transfer
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